Magnetoresistive sensor having multilayer thin film structure
US5598308A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1994 |
| Grant date | Jan 28, 1997 |
| Priority date | — |
| Expiry date | Aug 15, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetoresistive (MR) sensor comprising a layered structure having at least one trilayer comprising a first and a second thin film ferromagnetic layers separated by and in interfacial contact with a third thin film non-metallic magnetic layer. A fourth thin film layer of material is within the first ferromagnetic layer, and the fourth layer has a thickness between a fraction of a monolayer and several monolayers and is located at predetermined distance from the interface between the first and third layers. A current flow is produced through the MR sensor and variations in resistivity of the MR sensor produced by rotation of the magnetization in one or both of the ferromagnetic layers is sensed as a function of the magnetic field being sensed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.