Charles D. Merritt
25Patents
5h-index
15Co-inventors
66Inventor score
Filing activity: Nov 30, 1994 → Aug 20, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10297699B2 | In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers | Physics | 13 | Active |
| US9960571B2 | Weakly index-guided interband cascade lasers with no grown top cladding layer or a thin top cladding layer | Electricity | 11 | Active |
| US9923338B2 | Interband cascade lasers with low-fill-factor top contact for reduced loss | Electricity | 6 | Active |
| US8879593B2 | Epitaxial-side-down mounted high-power semiconductor lasers | Electricity | 6 | Active |
| US5568496A | Laser optics protective device | Emerging Cross-Sectional Technologies | 6 | Expired |
| US10062794B2 | Resonant-cavity infrared photodetectors with fully-depleted absorbers | Emerging Cross-Sectional Technologies | 4 | Active |
| US11125689B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 4 | Active |
| US8798111B2 | Interband cascade lasers with engineered carrier densities | Electricity | 4 | Active |
| US9059570B1 | Interband cascade lasers with engineered carrier densities | Electricity | 3 | Active |
| US7465661B2 | High aspect ratio microelectrode arrays | Chemistry; Metallurgy | 3 | Expired |
| US10559704B2 | In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers | Physics | 1 | Active |
| US11703453B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 1 | Active |
| US11709135B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US11698341B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US11761892B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US11573178B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US11619583B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US11719633B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US10461202B2 | In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers | Physics | 0 | Active |
| US11680901B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US11662310B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US11719634B2 | Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits | Electricity | 0 | Active |
| US10333011B2 | In-plane resonant cavity infrared photodetectors with fully depleted absorbers | Physics | 0 | Active |
| US10446701B2 | In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers | Physics | 0 | Active |
| US10453977B2 | In-plane resonant-cavity infrared photodetectors with fully-depleted absorbers | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.