Cheng-Jun Lin
2Patents
0h-index
7Co-inventors
24Inventor score
Filing activity: Jan 21, 2022 → Jun 6, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12041860B2 | Resistive memory device and method for manufacturing with protrusion of electrode | Electricity | 0 | Active |
| US12426517B2 | Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.