Resistive memory device and method for manufacturing with protrusion of electrode
US12041860B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 21, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jul 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.