Christopher Randolph McWilliams
6Patents
2h-index
4Co-inventors
36Inventor score
Filing activity: Apr 26, 2013 → Sep 16, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9722179B2 | Transition metal oxide resistive switching device with doped buffer region | Electricity | 4 | Active |
| US8816719B2 | Re-programmable antifuse FPGA utilizing resistive CeRAM elements | Electricity | 3 | Active |
| US10873025B2 | Formation of correlated electron material (CEM) device via dopant deposition and anneal | Electricity | 0 | Active |
| US11522133B2 | Correlated electron device formed via conversion of conductive substrate to a correlated electron region | Electricity | 0 | Active |
| US10418553B1 | Formation of correlated electron material (CEM) device via dopant deposition and anneal | Electricity | 0 | Active |
| US10217935B2 | Correlated electron device formed via conversion of conductive substrate to a correlated electron region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.