Correlated electron device formed via conversion of conductive substrate to a correlated electron region
US11522133B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
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Key dates
| Filing date | Feb 25, 2019 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Feb 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.