Dah Cheng Lin
1Patents
0h-index
4Co-inventors
19Inventor score
Filing activity: Oct 27, 2008 → Oct 27, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8053310B2 | Method for defect reduction for memory cell capacitors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.