David R. Decker
3Patents
3h-index
2Co-inventors
33Inventor score
Filing activity: Jun 30, 1975 → Feb 14, 1977
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US3986196A | Through-substrate source contact for microwave FET | Electricity | 55 | Expired |
| US4157556A | Heterojunction confinement field effect transistor | Electricity | 23 | Expired |
| US4141021A | Field effect transistor having source and gate electrodes on opposite faces of active layer | Electricity | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.