Heterojunction confinement field effect transistor

US4157556A · kind A · utility

Assignee

• Varian, Inc. · US

Inventors

• David R. Decker · Los Altos, US
• Ronald L. Moon · Atherton, US

Key dates

• Filing date: Jan 6, 1977
• Grant date: Jun 5, 1979
• Expiry date: Jan 6, 1997

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

An improved field-effect transistor is provided by forming the conducting channel boundary opposite the gate electrode as a heterojunction. For example a GaAs conducting channel may be bounded by an AlGaAs layer. The conduction electrons can penetrate the boundary very little and are constrained to the channel layer having good transport properties. The output conductance is reduced and the transconductance increased.