David Starosvetsky
5Patents
3h-index
9Co-inventors
50Inventor score
Filing activity: Nov 22, 2000 → May 14, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6521118B1 | Semiconductor etching process and apparatus | Electricity | 8 | Expired |
| US6830673B2 | Anode assembly and method of reducing sludge formation during electroplating | Chemistry; Metallurgy | 6 | Expired |
| US7494936B2 | Method for electrochemical etching of semiconductor material using positive potential dissolution (PPD) in solutions free from hydrogen fluoride (HF) | Electricity | 3 | Expired |
| US7964005B2 | Copper CMP slurry composition | Electricity | 0 | Expired |
| US12293853B2 | Carbon-nanotubes copper composite conductors | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.