Deep M. Jariwala
6Patents
2h-index
7Co-inventors
36Inventor score
Filing activity: Aug 1, 2014 → Nov 19, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9472686B2 | Gate-tunable P-N heterojunction diode, and fabrication method and application of same | Electricity | 2 | Active |
| US9515257B2 | Gate-tunable atomically-thin memristors and methods for preparing same and applications of same | Physics | 2 | Active |
| US10491206B2 | System and method for anti-ambipolar heterojunctions from solution-processed semiconductors | Electricity | 0 | Active |
| US10784848B2 | System and method for anti-ambipolar heterojunctions from solution-processed semiconductors | Electricity | 0 | Active |
| US9972799B2 | Gate-tunable p-n heterojunction diode, and fabrication method and application of same | Electricity | 0 | Active |
| US9929725B2 | System and method for anti-ambipolar heterojunctions from solution-processed semiconductors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.