Gate-tunable atomically-thin memristors and methods for preparing same and applications of same
US9515257B2 · kind B2 · utility
2Cited by
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42Claims
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Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Feb 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/53
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.