Devi Koty
3Patents
1h-index
11Co-inventors
34Inventor score
Filing activity: Apr 16, 2019 → Jun 3, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11258012B2 | Oxygen-free plasma etching for contact etching of resistive random access memory | Electricity | 4 | Active |
| US11844290B2 | Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices | Electricity | 1 | Active |
| US12057322B2 | Methods for etching metal films using plasma processing | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.