Methods for etching metal films using plasma processing
US12057322B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Oct 21, 2019 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Feb 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.