Dirk Drescher
4Patents
3h-index
8Co-inventors
36Inventor score
Filing activity: Oct 2, 2000 → Aug 23, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6479373B2 | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases | Electricity | 229 | Expired |
| US6781180B1 | Trench capacitor and method for fabricating the same | Electricity | 8 | Expired |
| US6693022B2 | CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures | Electricity | 3 | Expired |
| US6960541B2 | Process for fabrication of a semiconductor component having a tungsten oxide layer | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.