Process for fabrication of a semiconductor component having a tungsten oxide layer

US6960541B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dirk Drescher · Radeberg, DE
• Helmut Tews · Poughkeepsie, US
• Martin Schrems · Langenbruck, DE
• Helmut Wurzer · Dresden, DE

Key dates

• Filing date: Jul 16, 2001
• Grant date: Nov 1, 2005
• Expiry date: Jul 16, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02304
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative premittivity of the tungsten oxide layer is higher than 50.