Ender Hokelek
2Patents
2h-index
3Co-inventors
27Inventor score
Filing activity: Nov 4, 1986 → Sep 16, 1987
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4728617A | Method of fabricating a MOSFET with graded source and drain regions | Emerging Cross-Sectional Technologies | 90 | Expired |
| US4757026A | Source drain doping technique | Emerging Cross-Sectional Technologies | 46 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.