Erhong Li
3Patents
1h-index
7Co-inventors
37Inventor score
Filing activity: Feb 11, 2005 → May 30, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7119405B2 | Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies | Electricity | 7 | Expired |
| US10483410B2 | Forming front metal contact on solar cell with enhanced resistance to stress | Emerging Cross-Sectional Technologies | 0 | Active |
| US11257965B2 | Forming front metal contact on solar cell with enhanced resistance to stress | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.