Frank (Bin) Yang
2Patents
2h-index
3Co-inventors
30Inventor score
Filing activity: Apr 23, 2007 → Sep 17, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8120120B2 | Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobility | Electricity | 16 | Active |
| US7521380B2 | Methods for fabricating a stress enhanced semiconductor device having narrow pitch and wide pitch transistors | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.