Gerald Rescher
2Patents
0h-index
2Co-inventors
21Inventor score
Filing activity: Apr 3, 2019 → Feb 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12341012B2 | Method for annealing a gate insulation layer on a wide band gap semiconductor substrate | Electricity | 0 | Active |
| US11295951B2 | Wide band gap semiconductor device and method for forming a wide band gap semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.