Method for annealing a gate insulation layer on a wide band gap semiconductor substrate
US12341012B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Mar 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a wide band gap semiconductor device is provided. The method includes forming a gate insulation layer on a wide band gap semiconductor substrate and annealing the gate insulation layer using at least a first reactive gas species and a second reactive gas species, wherein the first reactive gas species differs from the second reactive gas species. The method can include forming a gate electrode on the gate insulation layer after annealing the gate insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.