Gerald Trombley
2Patents
1h-index
5Co-inventors
27Inventor score
Filing activity: Jun 6, 1994 → Apr 7, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5594262A | Elevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layer | Electricity | 6 | Expired |
| US5411902A | Process for improving gallium arsenide field effect transistor performance using an aluminum arsenide or an aluminum gallium arsenide buffer layer | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.