Hao-Cheng Tsai
1Patents
1h-index
2Co-inventors
22Inventor score
Filing activity: Sep 18, 2015 → Sep 18, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9524911B1 | Method for creating self-aligned SDB for minimum gate-junction pitch and epitaxy formation in a fin-type IC device | Electricity | 15 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.