Hidemitsu Hayashi
2Patents
2h-index
4Co-inventors
33Inventor score
Filing activity: Aug 28, 1996 → Jul 16, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6133120A | Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7189330B2 | Method of producing hydrogen rich water and hydrogen rich water generator | Chemistry; Metallurgy | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.