Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same
US6133120A · kind A · utility
10Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Aug 28, 1996 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Aug 28, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.