Hongming Gu
1Patents
0h-index
6Co-inventors
19Inventor score
Filing activity: Jun 29, 2016 → Jun 29, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10056452B2 | Method for manufacturing vertical super junction drift layer of power semiconductor devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.