Houpeng Chen
3Patents
1h-index
5Co-inventors
33Inventor score
Filing activity: Jun 24, 2011 → Apr 25, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8947924B2 | Data readout circuit of phase change memory | Physics | 8 | Active |
| US11568931B2 | Read-out circuit and read-out method for three-dimensional memory | Physics | 0 | Active |
| US10679697B2 | Read circuit of storage class memory with a read reference circuit, having same bit line parasitic parameters and same read transmission gate parasitic parameters as memory | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.