Hugues Lafontaine
3Patents
2h-index
3Co-inventors
37Inventor score
Filing activity: Nov 20, 2001 → Apr 18, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6559021B2 | Method of producing a Si-Ge base heterojunction bipolar device | Electricity | 8 | Expired |
| US7008864B2 | Method of depositing high-quality SiGe on SiGe substrates | Electricity | 3 | Expired |
| US10290623B2 | Gate input protection for devices and systems comprising high power E-mode GaN transistors | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.