Huoping Xin
1Patents
1h-index
2Co-inventors
22Inventor score
Filing activity: May 6, 2004 → May 6, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7282744B2 | III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier | Electricity | 15 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.