III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
US7282744B2 · kind B2 · utility
15Cited by
8References
30Claims
0Family size
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Key dates
| Filing date | May 6, 2004 |
| Grant date | Oct 16, 2007 |
| Priority date | — |
| Expiry date | May 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.