Hyeokjun Son
3Patents
1h-index
10Co-inventors
41Inventor score
Filing activity: Feb 19, 2013 → Feb 23, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8772115B2 | Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same | Electricity | 2 | Active |
| US11594604B2 | Semiconductor device including a gate structure | Electricity | 0 | Active |
| US11955523B2 | Semiconductor device including a gate structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.