Semiconductor device including a gate structure
US11955523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2023 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Feb 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
A semiconductor device includes: an active fin disposed on a substrate; a gate structure overlapping the active fin; source/drain regions disposed on both sides of the gate structure and on the active fin; and contact structures respectively connected to the source/drain regions, wherein the gate structure includes: a pair of gate spacers spaced apart from each other to provide a trench; a first gate electrode disposed in the trench and extending along an upper surface and a lateral surface of the active fin; a second gate electrode disposed on the first gate electrode in the trench, wherein the first gate electrode is not disposed between the second gate electrode and the pair of gate spacers; and a gate insulating film disposed between the pair of gate spacers and interposed between the first gate electrode and the active fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.