In Eung Kim
14Patents
6h-index
21Co-inventors
66Inventor score
Filing activity: Jun 7, 1995 → Mar 5, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6818531B1 | Method for manufacturing vertical GaN light emitting diodes | Emerging Cross-Sectional Technologies | 116 | Expired |
| US5917679A | Pseudo contact type negative pressure air bearing slider | Physics | 29 | Expired |
| US5872685A | Flying-type negative pressure air bearing slider | Physics | 24 | Expired |
| US5753131A | Magnetoresistive device and manufacturing method thereof | Physics | 17 | Expired |
| US7648849B2 | Nitride semiconductor light emitting diode having mesh DBR reflecting layer | Electricity | 17 | Active |
| US5703738A | Magnetic head magneto-resistive element with c-shaped multi-layered structure | Physics | 7 | Expired |
| US5748414A | Magnetoresistive element assembly with longitudinal bias | Physics | 5 | Expired |
| USRE39004E1 | Pseudo contact type negative pressure air bearing slider | General | 3 | Expired |
| US7095769B2 | Semiconductor laser diode with higher-order mode absorption layers | Electricity | 2 | Expired |
| US6914262B2 | White light emitting diode and method for manufacturing the same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7091055B2 | White light emitting diode and method for manufacturing the same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7018912B2 | Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7067401B2 | Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby | Emerging Cross-Sectional Technologies | 1 | Expired |
| US12148281B2 | Data logger device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.