Nitride semiconductor light emitting diode having mesh DBR reflecting layer
US7648849B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | May 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.