Jaroslav Olich
1Patents
1h-index
4Co-inventors
25Inventor score
Filing activity: Apr 12, 2000 → Apr 12, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6358823B1 | Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.