Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom
US6358823B1 · kind B1 · utility
3Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Apr 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating ion implanted doping layers in semiconductor materials by subjecting the material to an ultrasonic treatment during the implantation of predetermined impurities. In an alternate embodiment ultrasonic vibrations are generated by primary ion currents of sufficient density reflected by a piezo-electric element applied to the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.