Jayson Trinh
6Patents
6h-index
6Co-inventors
48Inventor score
Filing activity: Dec 7, 1995 → Dec 3, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5841165A | PMOS flash EEPROM cell with single poly | Electricity | 67 | Expired |
| US5706227A | Double poly split gate PMOS flash memory cell | Electricity | 47 | Expired |
| US5691939A | Triple poly PMOS flash memory cell | Electricity | 39 | Expired |
| US5796656A | Row decoder circuit for PMOS non-volatile memory cell which uses electron tunneling for programming and erasing | Physics | 37 | Expired |
| US6999543B1 | Clock data recovery deserializer with programmable SYNC detect logic | Electricity | 31 | Expired |
| US5777926A | Row decoder circuit for PMOS non-volatile memory cell which uses channel hot electrons for programming | Physics | 25 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.