Jérôme D. Lescot
2Patents
2h-index
1Co-inventors
27Inventor score
Filing activity: Mar 27, 2000 → Jul 12, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6291324A | Method of modeling IC substrate noises utilizing improved doping profile access | Electricity | 6 | Expired |
| US6920417B2 | Apparatus for modeling IC substrate noise utilizing improved doping profile access key | Physics | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.