Method of modeling IC substrate noises utilizing improved doping profile access
US6291324A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2000 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Mar 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for modeling a substrate, which includes obtaining vertically discretized doping profiles in the substrate to facilitate modeling. The method includes employing substrate region names and substrate cross-section names as access keys to permit accessing of the vertically discretized doping profiles. The use of the combination of region names and substrate cross-section names as unique access keys simplifies access to doping profile information for modeling purposes and yields valuable information pertaining to the presence of p-type to n-type material transitions. The information pertaining to transitions may be employed to improve substrate modeling accuracy through the inclusion of junction capacitances with the modeling process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.