Jiecai Han
1Patents
0h-index
10Co-inventors
23Inventor score
Filing activity: Feb 25, 2020 → Feb 25, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11139176B2 | Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.