Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs

US11139176B2 · kind B2 · utility

Assignee

• HARBIN INSTITUTE OF TECHNOLOGY · CN

Inventors

• Bing Dai · Xing'an, CN
• Jiwen Zhao · Xing'an, CN
• Jiaqi Zhu · Ekeren, BE
• Lei Yang · Shanghai, CN
• Wenxin Cao · Xing'an, CN
• Kang Liu · Xing'an, CN
• Jiecai Han · Xing'an, CN
• Guoyang Shu · Xing'an, CN
• Ge Gao · Beijing, CN
• Kaili Yao · Xing'an, CN
• Benjian Liu · Xing'an, CN

Key dates

• Filing date: Feb 25, 2020
• Grant date: Oct 5, 2021
• Expiry date: Jun 4, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/3732
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.