Jonas H. Kapraun
2Patents
0h-index
4Co-inventors
21Inventor score
Filing activity: Nov 5, 2020 → Nov 5, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12136798B2 | Vertical cavity surface emitting device with a buried index guiding current confinement layer | Electricity | 0 | Active |
| US11881683B2 | Epitaxial growth on a gallium arsenide phosphide capped material on a gallium arsenide substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.