Patent · US Active

Vertical cavity surface emitting device with a buried index guiding current confinement layer

US12136798B2 · kind B2 · utility

0Cited by

3References

23Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Constance J. Chang-Hasnain · Palo Alto, US
Jiaxing Wang · Beijing, CN
Kevin T. Cook · Berkeley, US
Jonas H. Kapraun · Albany, US
Emil Kolev · McLaren Vale, AU

Key dates

Filing date	Nov 5, 2020
Grant date	Nov 5, 2024
Priority date	—
Expiry date	Jul 3, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3406
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A vertical cavity surface emitter device (e.g., VCSEL or RC-LED) containing a buried index-guiding current confinement aperture layer which is grown, and lithographically processed to define position, shape and dimension of an inner aperture. In a regrowth process, the aperture is filled with a single crystalline material from the third contact layer. The aperture provides for both current and optical confinement, while allowing for higher optical power output and improved thermal conductivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.