Jonathan Kluth
1Patents
1h-index
2Co-inventors
22Inventor score
Filing activity: Sep 16, 1999 → Sep 16, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6403433B1 | Source/drain doping technique for ultra-thin-body SOI MOS transistors | Electricity | 24 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.