Source/drain doping technique for ultra-thin-body SOI MOS transistors

US6403433B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Bin Yu · Cupertino, US
• Jonathan Kluth · Sunnyvale, US
• Emi Ishida · Sunnyvale, US

Key dates

• Filing date: Sep 16, 1999
• Grant date: Jun 11, 2002
• Expiry date: Sep 16, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6713

Abstract

An ultra-large-scale integrated (ULSI) circuit includes MOSFETs on an SOI substrate. The MOSFETs include elevated source and drain regions. The elevated source and drain regions are amorphized before doping. Neutral ion species can be utilized to amorphize the elevated source and drain region. Dopants are activated in a low-temperature rapid thermal anneal process.