Jonathan T. Shaw
16Patents
7h-index
5Co-inventors
51Inventor score
Filing activity: Nov 25, 2014 → Aug 3, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9412667B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 17 | Active |
| US9570354B2 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Electricity | 11 | Active |
| US9577061B2 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Electricity | 10 | Active |
| US9543213B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 9 | Active |
| US9685379B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 8 | Active |
| US9859122B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 7 | Active |
| US9559010B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 7 | Active |
| US9721843B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 6 | Active |
| US9768071B2 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Electricity | 5 | Active |
| US9922831B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 5 | Active |
| US10367072B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 2 | Active |
| US9837319B2 | Asymmetric high-K dielectric for reducing gate induced drain leakage | Electricity | 2 | Active |
| US10374048B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 1 | Active |
| US11101357B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 0 | Active |
| US10734492B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 0 | Active |
| US10381452B2 | Asymmetric high-k dielectric for reducing gate induced drain leakage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.