Jun Nara
1Patents
0h-index
5Co-inventors
19Inventor score
Filing activity: May 4, 2017 → May 4, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10186596B2 | Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of suppressing deterioration of carrier mobility and variation in threshold voltage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.