Inventor · Higashimatsuyama, JP

Kimio Ogata

3Patents
3h-index
3Co-inventors
36Inventor score

Filing activity: Nov 29, 1988 → Dec 14, 1990

Most-cited inventions

PatentTitleAreaCited byStatus
US5027166A High voltage, high speed Schottky semiconductor device and method of fabrication Emerging Cross-Sectional Technologies 32 Expired
US5158909A Method of fabricating a high voltage, high speed Schottky semiconductor device Emerging Cross-Sectional Technologies 9 Expired
US5148240A High voltage, high speed schottky semiconductor device and method of fabrication Emerging Cross-Sectional Technologies 5 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.