High voltage, high speed Schottky semiconductor device and method of fabrication
US5027166A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1988 |
| Grant date | Jun 25, 1991 |
| Priority date | — |
| Expiry date | Nov 29, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/934
Abstract
A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resistive layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.