Kuo-Wei Liu
11Patents
11h-index
15Co-inventors
61Inventor score
Filing activity: Nov 4, 1998 → Mar 22, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6303523A | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 649 | Expired |
| US6348725B1 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 94 | Expired |
| US6660656B2 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 91 | Expired |
| US6562690B1 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 58 | Expired |
| US6541282B1 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 48 | Expired |
| US6596655B1 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6734115B2 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6632735B2 | Method of depositing low dielectric constant carbon doped silicon oxide | Electricity | 28 | Expired |
| US6930061B2 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6869896B2 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7560377B2 | Plasma processes for depositing low dielectric constant films | Emerging Cross-Sectional Technologies | 16 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.